7N65MJD2 transistor equivalent, 650v super junction mos power transistor.
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TO-251J-3L
1.Gate 2.Drain 3.Source
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TO-252-2L
* 7A,650V, RDS(on)(typ.)=0.55@VGS=10V
* New revolutionary high voltage technology
* Ultra lo.
SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with.
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